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Creators/Authors contains: "Dallesasse, J"

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  1. ; ; ; (, CS MANTECH 2022 Digest)
    The strain of diffusion masks utilized during the disordering process is demonstrated to modify the curvature of the disordering aperture. As a result, the various disordering apertures formed are shown to significantly impact the electro-optical performance and spectral characteristics of impurity-induced disordered VCSELs designed for single-fundamental-mode operation. An investigation and analysis of the electro-optical performance and spectral characteristics of IID VCSELs as a result of varying diffusion mask strains is presented. 
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    Accepted Manuscript Full Text Available
  2. ; ; (, JPhys photonics)
    null (Ed.)
    We provide a quantitative analysis of the spontaneous recombination time in the quantum well (QW) of a transistor laser (TL) that shows that owing to the heavy doping in the base of the transistor, Auger recombination is responsible for the short carrier lifetime and low quantum efficiency of the device. By taking advantage of the QW location close to the collector in the TL three-terminal configuration, we devise a new turn-off mechanism that results in quick electron tunneling through the QW barrier by applying a high base-collector reverse bias to deplete the QW and suppress further recombination. For practical base-collector reverse bias, tunneling time from the QW is on the order of 10th of picosecond, which with a lighter base doping density would simultaneously achieve a fast TL turn-off response, while reducing Auger recombination. 
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    Accepted Manuscript Full Text Available
  3. ; ; ; (, 2018 International Conference on Compound Semiconductor Manufacturing Technology)
    Impurity-induced disordering (IID) in vertical-cavity surface-emitting lasers (VCSELs) has been shown to provide enhanced performance, such as achieving single fundamental-mode operation with higher output powers when compared to conventional VCSELs. This work presents the performance of oxide-confined, λ ~ 850 nm, VCSELs fabricated with varying IID aperture sizes which are characterized for maximum single-fundamental-mode output power. The electrical and optical performance of these devices are shown in comparison to traditional oxide-confined VCSELs and the optimal IID aperture size is experimentally validated. Control of the lateral-to-vertical (L/V) IID aperture profile is then demonstrated through engineering the strain induced by the IID diffusion mask. This extensive control over the IID aperture enables improved, manufacturable, IID VCSEL designs. 
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    Accepted Manuscript Full Text Available